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s u r f a c e m o u n t f a s t r e c o v e r y r e c t i f i e r s r e v e r s e v o l t a g e - 5 0 t o 1 0 0 0 v f o r w a r d c u r r e n t - 1 a ratings at 25 ambient temperature unless otherwise specified. single phase half-wave 60 hz, resistive or inductive load, for capacitive load current derate by 20 %. c maximum dc blocking voltage peak forward surge current 8.3 ms single half sine wave superimposed on rated load (jedec method) maximum instantaneous forward voltage at 1 a p a r a m e t e r maximum repetitive peak revers e voltage maximum rms voltage operating and storage temperature range maximum average forward rectified current at ta = 65 c maximum dc reverse curren t ta = 25 c at rated dc blocking voltage ta =125 c maximum reverse recovery time 1 ? typical junction capacitance 2 ? v rrm v rms v dc i f(av) i fsm v f i r 50 100 200 400 600 800 1000 v 35 70 140 280 420 560 700 v 50 100 200 400 600 800 1000 v 1 30 1.3 5 50 150 250 500 15 -55 ~ +150 a a v ?a ns pf c 1 ? measured with i f = 0.5 a, i r = 1 a, i rr = 0.25 a 2 ? measured at 1mhz and applied reverse voltage of 4v d.c 2 3 ? p.c.b. mounted with 0.5 x 0.5" (12.7 x 12.7 mm ) copper pad areas. m a x i m u m r a t i n g s a n d e l e c t r i c a l c h a r a c t e r i s t i c s u n i t s c j t, t j stg t rr s y m b o l s r s 1 a b f r s 1 b b f r s 1 d b f r s 1 g b f r s 1 j b f r s 1 k b f r s 1 m b f features for surface mounted applications low profile package glass passivated chip junction easy to pick and place fast reverse recovery time lead free in comply with eu rohs 2011/65/eu directives mechanical data case: smbf terminals: solderable per mil-std-750, method 2026 " pprox. weight: 57mg / 0. 002oz " " " " " " " " a typical thermal resistance r ? ja 85 c/w 3 ? p i n n i n g pin 1 2 description cathode anode simplified outline smbf symbol 1 2 top view marking code: r1ab-r1m b r s 1 a b f t h r u r s 1 m b f
0.2 0.4 0.6 0.8 1.0 1.2 0.0 25 50 75 100 125 150 175 f i g . 1 f o r w a r d c u r r e n t d e r a t i n g c u r v e average forward current (a) ambient temperature ( c) single phase half-wave 60 hz resistive or inductive load f i g . 3 t y p i c a l i n s t a n e o u s f o r w a r d c h a r a c t e r i s t i c s instaneous forward current (a) 0.5 1.0 1.5 2.0 2.5 0.0 0.01 0.1 1.0 10 instaneous forwar d voltage (v) t=25 j c pulse with 300?s 1% duty cycle f i g . 2 t y p i c a l r e v e r s e c h a r a c t e r i s t i c s 0.1 1.0 10 100 20 40 60 80 100 120 00 140 percent of rated peak voltage (%) reverse instaneous current ? a ? reverse ? t =125 j c t=25 j c f i g . 4 t y p i c a l j u n c t i o n c a p a c i t a n c e junction capacitance ( pf) 1.0 10 100 0.1 1 10 100 reverse voltage (v) t =25 j c 05 10 15 20 25 30 00 10 100 f i g . 6 m a x i m u m n o n - r e p e t i t i v e p e a k f o r w a r d s u r a g e c u r r e n t peak a) forward surage current ( number of cycles 8.3 ms single half sine wave (jedec method) 1 35 100lfm r s 1 a b f t h r u r s 1 m b f
m a r k i n g type number marking code rs1abf rs1bbf rs1dbf rs1gbf rs1jbf rs1kbf rs1mbf r1ab r1bb r1db r1gb r1jb r1kb r1mb t h e r e c o m m e n d e d m o u n t i n g p a d s i z e unit ? mm(mil) 3.0(118) 1.8(71) 2.54(100) 1.8(71) p a c k a g e o u t l i n e p l a s t i c s u r f a c e m o u n t e d p a c k a g e ; 2 l e a d s s m b f a c " all round v a m e unit mm 1.3 0.26 4.4 3.7 5.5 1.1 0.18 4.2 3.5 5.1 9 max min mil max min acde h e " 2.2 1.9 e bottom view h e g to p view 1.0 g g " all round e d a e pad pad 51 10 173 146 216 43 7 165 138 200 86 75 40 r s 1 a b f t h r u r s 1 m b f

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